{
  "docId": "019de511-0f6d-704e-8e1a-f8274a397117",
  "docSlug": "ce18307b66d11612ad5fdf55c60073fb",
  "documentTitle": "Navitas | SPAC Presentation Deck | 44 slides",
  "authorId": "navitas",
  "authorName": "Navitas",
  "documentKindSlug": "pitchdeck",
  "documentKindLabel": "Pitch deck",
  "sourceTypeSlug": "investment_bank",
  "sourceTypeLabel": "Investment bank",
  "presentationDate": "2021-06-01 00:00:00",
  "orientation": "landscape",
  "aspectRatio": 1.7777778,
  "pageNumber": 18,
  "pageCount": 44,
  "prevPage": 17,
  "nextPage": 19,
  "slideType": "market_sizing",
  "function": "size_opportunity",
  "density": "dense",
  "nDataPoints": 1,
  "notes": "The chart uses a 2D scatter-like layout to segment power electronics by voltage (x-axis) and power (y-axis), positioning GaN between Si and SiC.",
  "elementsJson": null,
  "metadataConfidence": 1,
  "imagePath": null,
  "slideHref": "/slides/019de511-0f6d-704e-8e1a-f8274a397117/18",
  "deckHref": "/decks/019de511-0f6d-704e-8e1a-f8274a397117",
  "deckJsonHref": "/decks/019de511-0f6d-704e-8e1a-f8274a397117.json",
  "deckAnchorHref": "/decks/019de511-0f6d-704e-8e1a-f8274a397117#slide-18",
  "components": [
    {
      "bbox": {
        "h": 0.25,
        "w": 0.18,
        "x": 0.8,
        "y": 0.2
      },
      "kind": "callout",
      "text": "GaN's wide band gap allows power applications with voltages between 80V – 1,000V to use smaller, more efficient chips, reducing costs and carbon emissions",
      "attrs": null,
      "subkind": "primary",
      "toolName": null,
      "toolSlug": null,
      "confidence": null,
      "componentId": "61057eb4-861b-4a45-806e-86d7774f0bbc",
      "frameworkName": null,
      "frameworkSlug": null
    },
    {
      "bbox": {
        "h": 0.25,
        "w": 0.18,
        "x": 0.8,
        "y": 0.48
      },
      "kind": "callout",
      "text": "SiC, with higher thermal conductivity, is best suited for the highest power applications that require large heat dissipation",
      "attrs": null,
      "subkind": "primary",
      "toolName": null,
      "toolSlug": null,
      "confidence": null,
      "componentId": "a4188aad-b8c9-4a38-bb74-184bfe69957b",
      "frameworkName": null,
      "frameworkSlug": null
    },
    {
      "bbox": {
        "h": 0.75,
        "w": 0.78,
        "x": 0.05,
        "y": 0.15
      },
      "kind": "chart",
      "text": "Application Power vs Device Voltage chart",
      "attrs": null,
      "subkind": "scatter",
      "toolName": null,
      "toolSlug": null,
      "confidence": null,
      "componentId": "ef0e1321-ca62-4808-8f04-530b8cf07e08",
      "frameworkName": null,
      "frameworkSlug": null
    },
    {
      "bbox": {
        "h": 0.04,
        "w": 0.65,
        "x": 0.24,
        "y": 0.95
      },
      "kind": "source-note",
      "text": "(1) GaN IC potential market based on voltage rating of 80V – 1,000V derived from Yole Développement. Status of the Power Electronic Industry 2020. Reflects estimated GaN market opportunity for power semiconductors by 2026.",
      "attrs": null,
      "subkind": null,
      "toolName": null,
      "toolSlug": null,
      "confidence": null,
      "componentId": "f42679fb-17ff-4b9a-a1d8-f15113629a69",
      "frameworkName": null,
      "frameworkSlug": null
    },
    {
      "bbox": {
        "h": 0.08,
        "w": 0.9,
        "x": 0.05,
        "y": 0.87
      },
      "kind": "title",
      "text": "We Believe GaN ICs Will Displace A Significant Portion Of the Legacy Silicon-Based Power Semi Market From 80V To 1,000V And From 10W To Up To 100kW",
      "attrs": null,
      "subkind": "action-title",
      "toolName": null,
      "toolSlug": null,
      "confidence": null,
      "componentId": "945474fd-9117-483a-abed-dc84b4b23c44",
      "frameworkName": null,
      "frameworkSlug": null
    },
    {
      "bbox": {
        "h": 0.06,
        "w": 0.58,
        "x": 0.03,
        "y": 0.06
      },
      "kind": "title",
      "text": "GaN: An Expansive Market Opportunity",
      "attrs": null,
      "subkind": "headline",
      "toolName": null,
      "toolSlug": null,
      "confidence": null,
      "componentId": "79903942-d786-4c62-8b7b-e62088290016",
      "frameworkName": null,
      "frameworkSlug": null
    }
  ],
  "metrics": [],
  "tools": [],
  "frameworks": [
    {
      "name": "market-segmentation-pyramid",
      "slug": null,
      "matchId": "d0857d95-7c9e-4648-9911-fd0ff1ed6887",
      "evidence": "The chart segments the power electronics market by voltage and power capacity to define the addressable market for GaN.",
      "confidence": 0.8
    }
  ],
  "arcBeats": [
    {
      "to": 18,
      "from": 17,
      "beatId": "3b942211-e550-4b5b-86c1-2022306d9c52",
      "arcName": "The Sequoia Pitch",
      "arcSlug": "sequoia-pitch",
      "beatName": "Market Size",
      "beatSlug": "sequoia-pitch-market-size",
      "evidence": "The deck highlights the potential market size for GaN ICs, including the possibility of displacing a $13B market.",
      "position": 2,
      "confidence": 0.8,
      "parentBeatName": "Evidence",
      "parentBeatSlug": "evidence"
    }
  ],
  "loops": [],
  "imagePathAlt": null,
  "thumbSrc": null,
  "thumbSrcAlt": null,
  "locked": true
}