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  "notes": "レーザーテックの技術的欠陥を指摘するアクティビスト・デッキの典型的な構成。",
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      "text": "レーザーテックは同社製の極端紫外線マスク検査装置に搭載している光源に致命的な不良を抱えているので、従来の極端紫外線検査の輝度や安定性の基本的な条件すら満たせていない。",
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      "text": "EUV light source for high-NA and low-NA lithography",
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      "text": "高開口数に対応するために極端紫外線光源に施さなければいけない各種の変化・改善",
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      "text": "開口数0.33で行われる従来の極端紫外線のリソグラフィとマスク検査に比べて、それより高い開口数でリソグラフィとマスク検査を行うためには、出力、安定性、輝度、それぞれを高めた新しい極端紫外線光源が必要になる。もちろん、新しい光学系も必要になる。レーザーテックは同社製の極端紫外線マスク検査装置に搭載している光源に致命的な不良を抱えているので、従来の極端紫外線検査の輝度や安定性の基本的な条件すら満たせていない。したがって、より高い開口数に対応できるはずもない。2023年4月にASMLのエンジニアが国際光学会の会議で発表した論文では、高開口数のために必要になる「光学コラムの透過性の改善」に向けての新しい発光体の開発など、諸々の「光源の性能と形状の要件」が紹介されている。",
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      "text": "High NA (0.55NA) EUVL Scanners are in development for future nodes of device manufacturing, with new requirements for source performance and geometry. Our customers have all engaged in this program, some calling it the most important next step in lithography. In this paper we discuss our progress on the source integration, de-risking and acceptance testing for High NA. — Karl Umstadter, Matthew Graham, Michael Purvis, Alex Schafgans, Jayson Stewart, Peter Mayer, Daniel Brown",
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      "text": "出典：https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12494/124940Z/EUV-light-source-for-high-NA-and-low-NA-lithography/10.1117/12.2657772.full",
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