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  "documentTitle": "Lasertec Corporation (6920)",
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  "authorName": "Scorpion Capital",
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  "notes": "The slide uses a KLA presentation to highlight a technical contradiction between the need for cleanliness and the inherent dirtiness of plasma sources.",
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      "text": "EUV mask inspection, specifically final one at mask shop, must find defects but not contaminate!",
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      "text": "EUV mask inspection, specifically final one at mask shop, must find defects but not contaminate! These inspectors are the cleanest machines among all tools used in a fab / mask shop. Example Teron 640e: less than 0.1 PRP. Plasma based sources are the dirtiest parts in EUV tools. Scanner best values: 1 adder per 10k wafers. Based on scanner research, tin may reach the mask due to secondary effects.",
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      "text": "A KLA presentation on EUV mask inspection stressed the dangers of particle contamination – the tools “must find defects but not contaminate!” and must be “the cleanest machines among all tools used in a fab/mask shop.” Unfortunately, as the photos of tin splatter show, “plasma based sources are the dirtiest parts in EUV tools…in inspectors, the problem of isolating the mask from source debris is more severe than in scanners” – “bounced/released micro-particles, liquid tin splashing, and accumulation (and sputtering) of deposited tin at the walls.”",
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      "text": "plasma based sources are the dirtiest parts in EUV tools. In inspectors, the problem of isolating the mask from source debris is more severe than in scanners — bounced/released micro-particles, liquid tin splashing, and accumulation (and sputtering) of deposited tin at the walls. — KLA presentation \"Source performance metrics for EUV mask inspection\"",
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      "text": "I. V. Fomenkov, “EUV sources for high-volume manufacturing”, from EUV Lithography, ed. V. Bakshi (2018); K. Gielissen, “The nature and characteristics of particles produced by EUV sources: exploration, prevention and mitigation”, PhD thesis TU Eindhoven, 2009",
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